IPD110N12N3GATMA1

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Hluti framleiðanda	IPD110N12N3GATMA1
Framleiðandi	IR (Infineon Technologies)
Lýsing	MOSFET N-CH 120V 75A TO252-3
Flokkur	stakar hálfleiðaravörur
Fjölskylda	smári - fets, mosfets - stakir
Lífsferill:	New from this manufacturer.
Afhending:	DHL FedEx Ups TNT EMS
Greiðsla	T/T Paypal Visa MoneyGram Western Union
Gagnablað	IPD110N12N3GATMA1 PDF

Framboð

Á lager	266.416
Einingaverð	$ 2.16000

IPD110N12N3GATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPD110N12N3GATMA1 Tæknilýsing

Gerð	Lýsing
röð:	OptiMOS™
pakka:	Tape & Reel (TR)Cut Tape (CT)
stöðu hluta:	Active
fet gerð:	N-Channel
tækni:	MOSFET (Metal Oxide)
tæma til uppspretta spennu (vdss):	120 V
straumur - samfellt frárennsli (id) @ 25°c:	75A (Tc)
drifspenna (hámark rds á, lágmark rds á):	10V
rds á (max) @ id, vgs:	11mOhm @ 75A, 10V
vgs(th) (max) @ id:	3V @ 83µA (Typ)
hliðargjald (qg) (max) @ vgs:	65 nC @ 10 V
vgs (hámark):	±20V
inntaksrýmd (ciss) (max) @ vds:	4310 pF @ 60 V
fet lögun:	-
aflnotkun (hámark):	136W (Tc)
Vinnuhitastig:	-55°C ~ 175°C (TJ)
uppsetningargerð:	Surface Mount
birgir tæki pakki:	PG-TO252-3
pakki / hulstur:	TO-252-3, DPak (2 Leads + Tab), SC-63

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